Cmos structure on ssoi wafer

ABSTRACT

A method of forming fins in a complimentary-metal-oxide-semiconductor (CMOS) device that includes a p-type field effect transistor device (pFET) and an n-type field effect transistor (nFET) device and a CMOS device are described. The method includes forming a strained silicon-on-insulator (SSOI) layer in both a pFET region and an nFET region, etching the strained silicon layer, the insulator, and a portion of the bulk substrate in only the pFET region to expose the bulk substrate, epitaxially growing silicon (Si) from the bulk substrate in only the pFET region, and epitaxially growing additional semiconductor material on the Si in only the pFET region. The method also includes forming fins from the additional semiconductor material and a portion of the Si grown on the bulk substrate in the pFET region, and forming fins from the strained silicon layer and the insulator in the nFET region.

DOMESTIC BENEFIT/NATIONAL STAGE INFORMATION

This application is a division of U.S. application Ser. No. 14/618,397filed Feb. 10, 2015, the disclosure of which is incorporated byreference herein in its entirety.

BACKGROUND

The present invention relates to a complementarymetal-oxide-semiconductor (CMOS) structure, and more specifically, to aCMOS structure formed on a strained silicon-on-insulator (SSOI) wafer.

A fin field effect transistor (finFET) is a type ofmetal-oxide-semiconductor FET (MOSFET) in which a conducting channel iswrapped by a silicon fin. A finFET device may be a complementarymetal-oxide-semiconductor (CMOS) device that includes a p-typemetal-oxide-semiconductor (pMOS) finFET device or pFET and an n-typemetal-oxide-semiconductor (NMOS) finFET device or nFET formed on asubstrate. A typical silicon-on-insulator (SOI) wafer includes asubstrate with a silicon layer having a neutral silicon lattice. Whenthe silicon lattice is bigger than a neutral silicon lattice, thesilicon is said to be under tensile strain. This is typically the strainexperienced in an SSOI wafer. When the silicon lattice is smaller than aneutral silicon lattice, the silicon is said to be under compressivestrain. As noted, a finFET (e.g., CMOS device) may include an n-channelregion (nFET) and a p-channel region (pFET) with silicon (Si) andsilicon germanium (SiGe) fins, respectively. While an SSOI substrate mayimprove performance in the nFET, the tensile strained SSOI substrate maycause mobility degradation in the pFET channel region.

SUMMARY

According to one embodiment of the present invention, a method offorming fins in a complimentary-metal-oxide-semiconductor (CMOS) devicethat includes a p-type field effect transistor device (pFET) and ann-type field effect transistor (nFET) device includes forming a strainedsilicon-on-insulator (SSOI) layer in both a pFET region and an nFETregion, the SSOI layer including a strained silicon layer disposed on aninsulator that is disposed on a bulk substrate; etching the strainedsilicon layer, the insulator, and a portion of the bulk substrate inonly the pFET region to expose the bulk substrate; epitaxially growingsilicon (Si) from the bulk substrate in only the pFET region;epitaxially growing additional semiconductor material on the Si in onlythe pFET region; forming one or more fins from the additionalsemiconductor material and a portion of the Si grown on the bulksubstrate in the pFET region; and forming one or more fins from thestrained silicon layer and at least a portion of the insulator in thenFET region.

According to another embodiment, acomplimentary-metal-oxide-semiconductor (CMOS) device includes an n-typefield effect transistor (nFET) region, the nFET region including one ormore fins comprised of strained silicon on an insulator; and a p-typefield effect transistor (pFET) region, the pFET region including one ormore fins comprised of silicon (Si) or silicon germanium (SiGe) onepitaxially grown silicon.

Additional features and advantages are realized through the techniquesof the present invention. Other embodiments and aspects of the inventionare described in detail herein and are considered a part of the claimedinvention. For a better understanding of the invention with theadvantages and the features, refer to the description and to thedrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The forgoing and other features, and advantages ofthe invention are apparent from the following detailed description takenin conjunction with the accompanying drawings in which:

FIGS. 1-13 show cross-sectional views of intermediate structuresinvolved in processes to form Si fins on an insulator in the nFET regionand SiGe fins on silicon in the pFET region according to an embodimentof the invention, in which:

FIG. 1 shows a starting SSOI wafer prior to formation of any fins by thepresent embodiment;

FIG. 2 shows the intermediate structure resulting from deposition of ahard mask layer, an under layer, and a patterned photoresist layer onthe SSOI wafer of FIG. 1;

FIG. 3 shows the intermediate structure that results from etchingthrough the layers including a portion of the substrate in the pFETregion;

FIG. 4 shows the intermediate structure that results from epitaxialgrowth of silicon from the substrate and subsequent epitaxial growth ofan SiGe layer in the pFET region;

FIG. 5 shows the intermediate structure that results from stripping thehard mask layer from the nFET region of the structure shown in FIG. 4;

FIG. 6 shows the intermediate structure that results from deposition ofthe hard mask layer in both the pFET and nFET regions;

FIG. 7 shows the intermediate structure that results from deposition ofa mandrel layer and a patterned lithographic mask over the hard masklayer;

FIG. 8 shows the intermediate structure that results from patterning themandrel layer using the patterned lithographic mask and deposing aspacer material over the patterned mandrel layer;

FIG. 9 shows the intermediate structure that results from an etch of thehorizontally deposited portions of the spacer material;

FIG. 10 shows the intermediate structure that results from pulling thepatterned mandrel layer from the structure shown in FIG. 9, leavingspacers;

FIG. 11 shows the intermediate structure resulting from etching fins inthe pFET region and the nFET region using the spacers;

FIG. 12 shows the intermediate structure resulting from deposition of adielectric layer fill; and

FIG. 13 shows the structure resulting from etching back the dielectriclayer and stripping off the hard mask;

FIGS. 14-22 show cross-sectional views of intermediate structuresinvolved in processes to form Si fins on an insulator in the nFET regionand SiGe fins on silicon in the pFET region according to anotherembodiment of the invention, in which:

FIG. 14 shows a starting SSOI wafer prior to formation of any fins bythe present embodiment;

FIG. 15 shows the intermediate structure resulting from deposition of ahard mask layer, an under layer, and a patterned photoresist layer onthe SSOI wafer of FIG. 14;

FIG. 16 shows the intermediate structure that results from etchingthrough the layers including a portion of the substrate in the pFETregion;

FIG. 17 shows the intermediate structure that results from epitaxialgrowth of silicon from the substrate and subsequent epitaxial growth ofan SiGe layer in the pFET region;

FIG. 18 shows the intermediate structure that results from stripping thehard mask layer from the nFET region of the structure shown in FIG. 17;

FIG. 19 shows the intermediate structure that results from deposition ofthe hard mask layer in both the pFET and nFET regions;

FIG. 20 shows the intermediate structure resulting from etching fins inthe pFET region and the nFET region;

FIG. 21 shows the intermediate structure resulting from deposition of adielectric layer fill; and

FIG. 22 shows the structure resulting from etching back the dielectriclayer and stripping off the hard mask.

DETAILED DESCRIPTION

As noted above, an SSOI wafer or a wafer that includes strained silicon(typically tensile strained silicon) may prove advantageous for an nFETdevice but degrade performance in the pFET channel region. Embodimentsof the systems and methods detailed herein relate to the release of pFETchannel strain while maintaining (tensile) strained SOI in the nFETregion.

FIGS. 1-13 illustrate the processes involved in forming Si fins from(tensile) strained silicon on an insulator in the nFET region andforming SiGe fins on Si in the pFET region according to one embodiment.FIG. 1 is a cross-sectional view of an SSOI wafer 100 used to define aPFET region and an nFET region according to the embodiment detailedbelow. The SSOI wafer 100 includes a strained silicon layer 110 on aninsulator 120 (e.g., buried oxide (BOX)). The SSOI wafer 100 may beobtained through known fabrication methods that include, for example,growing a gradient SiGe layer on an Si wafer to form a relaxed SiGelayer, and epitaxially growing an Si layer above the SiGe layer. Becausethe relaxed SiGe has a larger lattice than Si crystal (neutral), theepitaxially grown Si layer will be tensile strained. Another Si waferand with OX (as buried oxide) may be formed and then bonded with thestrained Si/SiGe/Si substrate wafer on the BOX (via a wafer bondingtechnique, for example). Hydrogen (H+ ion) implantation may then be usedto cut the SiGe and Si substrate off through a smart-cut technique, forexample, and any remaining SiGe layer on strained Si may be etched offto form the SSOI wafer 100. The insulator 120 is formed on a bulksubstrate 130.

FIG. 2 shows the intermediate structure 200 that results from depositinga hard mask layer 115 on the strained silicon layer 110 of the SSOIwafer 100 followed by deposition of an under layer 125 and a patternedphotoresist layer 135. The hard mask layer 115 may be comprised ofsilicon nitride (SiN) for example. The under layer 125 may include anorganic dielectric layer (ODL) and a silicon-containing antireflectioncoating (SiARC). The photoresist layer 135 is patterned to cover theunder layer 125 in the nFET region 102 while leaving the under layer 125exposed in the pFET region 101. FIG. 3 shows the intermediate structure300 that results from a subsequent etch of the structure 200 shown inFIG. 2. The under layer 125 and photoresist layer 135 are etched throughin the nFET region 102. Based on the patterning of the photoresist layer135 and by selectively controlling a depth of the etching process, theexposed area (the pFET region 101) is etched through all the layers,leaving only a portion of the substrate 130. The SSOI wafer 100 and hardmask layer 115 remain intact in the nFET region 102.

FIG. 4 shows the intermediate structure 400 resulting from epitaxialgrowth of silicon (130) and a silicon germanium (SiGe) layer 140 overthe remaining substrate 130 in the pFET region 101. Epitaxial growth ofthe silicon begins from the substrate 130, as shown. The SiGe layer 140is then epitaxially grown on the epitaxially grown Si 130. Alternately,additional Si rather than the SiGe layer 140 may be epitaxially grown toform Si fins in the pFET region 101 as well as in the nFET region 102.However, the epitaxially grown silicon in the pFET region would have nostrain (resulting in neutral fins in the pFET region 101). The SiGelayer 140 may be neutral or have compressive strain. The epitaxialgrowth of Si from the substrate 130 is controlled to be about the sameheight as the insulator 120. The subsequent epitaxial growth of the SiGelayer 140 (or additional Si) is controlled such that the additional Sior SiGe layer 140 is about the same height as the strained silicon layer110 in the nFET region 102. The hard mask layer 115 is stripped from thenFET region 102 to result in the intermediate structure 500 shown inFIG. 5. FIG. 6 shows the intermediate structure 600 that results fromdeposition of another hard mask layer 115 over both the pFET region 101and the nFET region 102.

FIGS. 7-11 show some of the processes involved in forming fins in thepFET region 101 and nFET region 102. The intermediate structure 700shown in FIG. 7 includes a mandrel layer 145 deposited on the hard masklayer 115 and a lithographic mask 150 patterned over the mandrel layer145. The mandrel layer 145 may be amorphous carbon or amorphous silicon,for example. The lithographic mask 150 may be comprised of SiARC, anoptical planarization layer, and a photoresist layer, for example. FIG.8 shows the intermediate structure 800 that results from patterning themandrel layer 145 using the lithographic mask 150 and then depositing aspacer material 155 over the patterned mandrel layer 145. FIG. 9 showsthe structure 900 that results from an anisotropic (directional)reactive ion etch (RIE) process to etch the horizontally disposedportions of the spacer material 155 shown in the structure 800 of FIG. 8into sidewall spacers for the patterned mandrel layer 145. Pulling themandrel layer 145 from the structure 900 of FIG. 9 results in theintermediate structure 1000 shown in FIG. 10. The remaining spacermaterial 155 acts as a pattern to etch the hard mask layer 115 and SSOIwafer 100 in the nFET region 102 and the hard mask layer 115, SiGe layer140, and substrate 130 in the pFET region 101, resulting in thestructure 1100 shown in FIG. 11. The etching is accomplished by an RIEprocess and results in the Si fins 1110 and SiGe fins 1120 shown in FIG.11.

As FIG. 11 indicates, the Si fins 1110 include the strained siliconlayer 110 while the SiGe fins 1120 do not include any of the strainedsilicon layer 110. FIG. 12 shows the intermediate structure 1200 thatresults from a dielectric film 160 fill and chemical mechanicalplanarization (CMP) process. The dielectric film 160 may be an oxide(e.g., SiO₂) and may be the same oxide as the buried oxide of theinsulator 120, for example. The dielectric film 160 is etched back viaan RIE process and the hard mask layer 115 is stripped to result in thestructure 1300 shown in FIG. 13. The fin reveal process to strip thehard mask layer 115 may include using a hot phosphoric acid (H₃PO₄)(e.g., 160 degrees Celsius) to perform etching that is selective to thedielectric film 160, and Si and SiGe material of the fins 1110, 1120.Etch rate and etch time are controlled to selectively etch and revealthe Si and SiGe fins 1110, 1120. At this stage, known processes may beperformed to reveal the Si fins 1110 and SiGe fins 1120 and complete theformation of the CMOS device.

FIGS. 14-22 illustrate the processes involved in forming Si fins from(tensile) strained silicon on an insulator in the nFET region andforming SiGe fins on Si in the pFET region according to anotherembodiment. The embodiment addressed by FIGS. 14-22 involves a thickerinsulator layer within the SSOI such that the Si fins in the nFET regionare formed on fins formed from the insulator layer that extend above theinsulator layer. That is, the fin etch does not completely extendthrough the entire thickness of the insulator such that the insulatorlayer is part of the fin structure as well as being a base of the finstructure in the nFET region. Generally, an insulator (e.g., BOX) with athickness of 100 nanometers (nm) or less (e.g., 20 nm) may be considered“thin” while a thicker insulator (e.g., 140 nm to 200 nm) may beconsidered “thick.” FIGS. 1-13 are directed to an embodiment with a“thin” insulator while FIGS. 14-22 are directed to an embodiment with a“thick” insulator.

FIG. 14 shows an SSOI wafer 1400. Like the SSOI wafer 100 shown in FIG.1, the SSOI wafer 1400 of FIG. 14 includes a strained silicon layer 110on an insulator 120 which is disposed on a bulk substrate 130. Theinsulator 120 of the SSOI wafer 1400 shown in FIG. 14 is thicker thanthe insulator 120 of the SSOI wafer 100 shown in FIG. 1. This leads to adifference in the resulting Si fins 2010, as discussed with reference toFIG. 20 below.

FIG. 15 shows the intermediate structure 1500 that results fromdeposition of the hard mask layer 115 on the strained silicon layer 110of the SSOI wafer 100 followed by deposition of the under layer 125 andthe patterned photoresist layer 135. As noted with reference to FIG. 2,the patterned photoresist layer 135 covers the under layer 125 in thenFET region 102 but not in the pFET region 101. Performing an etch toremove all the layers in the pFET region 101, including a portion of thesubstrate 130, results in the structure 1600 shown in FIG. 16. Thephotoresist layer 135 prevents etching of the layers in the nFET region102. FIG. 17 shows the structure 1700 resulting from epitaxial growth ofsilicon from the substrate 130 followed by epitaxial growth of an SiGelayer 140 (which may alternately be additional Si) in the pFET region101. As noted with reference to FIG. 4 above, the epitaxial growth maybe controlled such that the Si grows to about the height of theinsulator 120 and the SiGe layer 140 (or additional Si) height is aboutthat of the strained silicon layer 110 in the nFET region 102. FIG. 18shows the structure 1800 resulting from stripping the hard mask layer115 from the nFET region 102. FIG. 19 shows the structure 1900 resultingfrom deposition of the hard mask layer 115 over both the pFET region 101and the nFET region 102.

A fin etch process similar to that shown and discussed with reference toFIG. 7-11 is performed to obtain the structure 2000 shown in FIG. 20.FIG. 20 indicates four fins 2010, 2020 in each of the pFET and nFETregions 101, 102. The number of fins may be one or any number and isdetermined by the number of spacers used to pattern the fins (see e.g.,FIG. 10). As a comparison of FIG. 11 and FIG. 20 indicates, theadditional thickness of the insulator 120 layer according to theembodiment shown in FIGS. 14-22 results in the insulator 120 being botha base on which fins 2010 are formed, as well as a part of the fins 2010in the nFET region 102. A dielectric film 160 fill followed by a CMPprocess is once again performed to provide the structure 2100 shown inFIG. 21, and the dielectric film 160 is etched back and the hard masklayer 115 is stripped (e.g., using a hot phosphorous solution asdiscussed with reference to FIG. 13) in a fin reveal process to providethe structure 2200 shown in FIG. 22. At this stage, known processes areperformed to complete the fabrication of the CMOS. Like the embodimentdiscussed with reference to FIGS. 1-13, the present embodiment resultsin fins 2020 in the pFET region 101 that do not include the strainedsilicon layer 110, while the fins 2010 in the nFET region 102 includethe strained silicon layer 110 and SSOI wafer 1400.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of onemore other features, integers, steps, operations, element components,and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. Many modifications andvariations will be apparent to those of ordinary skill in the artwithout departing from the scope and spirit of the invention. Theembodiment was chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

The flow diagrams depicted herein are just one example. There may bemany variations to this diagram or the steps (or operations) describedtherein without departing from the spirit of the invention. Forinstance, the steps may be performed in a differing order or steps maybe added, deleted or modified. All of these variations are considered apart of the claimed invention.

While the preferred embodiment to the invention had been described, itwill be understood that those skilled in the art, both now and in thefuture, may make various improvements and enhancements which fall withinthe scope of the claims which follow. These claims should be construedto maintain the proper protection for the invention first described.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiments, the practical application or technicalimprovement over technologies found in the marketplace, or to enableothers of ordinary skill in the art to understand the embodimentsdisclosed herein.

What is claimed is:
 1. A complimentary-metal-oxide-semiconductor (CMOS)device, comprising: an n-type field effect transistor (nFET) region, thenFET region including one or more fins comprised of strained silicon onan insulator; and a p-type field effect transistor (pFET) region, thepFET region including one or more fins comprised of silicon (Si) orsilicon germanium (SiGe) on epitaxially grown silicon.
 2. The deviceaccording to claim 1, wherein the epitaxially grown silicon is grownfrom a bulk substrate.
 3. The device according to claim 2, wherein theSi is additional epitaxially grown silicon.
 4. The device according toclaim 3, wherein the additional epitaxially grown silicon is disposed inthe pFET region to a same height as the strained silicon in the nFETregion.
 5. The device according to claim 1, wherein the SiGe isepitaxially grown SiGe.
 6. The device according to claim 5, wherein theSiGe is epitaxially grown in the pFET region to a same height as thestrained silicon in the nFET region.
 7. The device according to claim 1,wherein the one or more fins in the nFET region are disposed on theinsulator formed as fins.
 8. The device according to claim 7, whereinthe insulator formed as fins is formed on a substrate formed as fins. 9.The device according to claim 8, wherein the substrate formed as fins isformed on a bulk substrate.
 10. The device according to claim 8, whereina height of the epitaxially grown silicon is greater than a height ofthe insulator formed as fins on the substrate formed as fins.
 11. Thedevice according to claim 7, wherein the insulator formed as fins isformed on an insulator layer.
 12. The device according to claim 11,wherein the insulator layer is formed on a bulk substrate.
 13. Thedevice according to claim 11, wherein a height of the epitaxially grownsilicon is a same height as the insulator formed as fins on theinsulator layer.
 14. The device according to claim 1, wherein theinsulator is a strained silicon-on-insulator (SSOI).